| 摘要 |
A solid state image sensing device is formed of a plurality of photo-sensing sections arranged in a two-dimensional fashion at a pixel unit in the horizontal and vertical directions. In this case, each of the plurality of photo-sensing sections is formed of a feedback gate transistor whose gate electrode and source electrode are both connected to a vertical signal line, a vertical selection transistor which is connected in series to the feedback gate transistor and whose gate electrode is connected to a horizontal selection line, and a photoelectric conversion element provided under a channel region of each of the feedback gate transistor and the vertical selection transistor, whereby the sensitivity of the solid state image sensing device is increased and the smear thereof can be lowered.
|
