| 摘要 |
PURPOSE:To produce the subject boron nitride product, especially a thermally decomposed boron nitride product suitable as a crucible used for growing single crystal of compound semiconductor of III-V group, a cell for fusing metals such as Al and Ga used for vacuum evaporation or molecular beam epitaxy(MBE), etc., or a jig in MBE apparatus. CONSTITUTION:This thermally decomposed boron nitride product is characterized in that a compound of Si, Ca and C is not substantially bonded to the surface of the thermally decomposed boron nitride product produced by CVD reaction of a boron halide with ammonia. This method for producing the boron nitride product comprises washing the thermally decomposed boron nitride product produced by CVD reaction of a boron halide with ammonia with pure water having >=18MOMEGA.cm specific resistance, <=5/ml fine particles and <=100ppb total organic carbon amount (TOC). |
