| 摘要 |
PURPOSE:To improve lowering of characteristics by back gate effect by commonly connecting a p-type layer, an n-type source region, an n-type layer and a p-type source region to an output contact. CONSTITUTION:A channel region 33 of an N-type transistor Q1 is formed in a p-type layer 30 wherein an output voltage VOUT is also applied to the N-type transistor Q1 similarly to a p-type transistor Q2 as a substrate potential from an output contact OUT through a p-type contact region 36, and the same output voltage VOUT is also applied to the n-type source region (S1) 32. Therefore, a threshold voltage VTN which depends on substrate potential source potential becomes small and the value does not change by an output voltage level. Therefore, as for input-output characteristic in a range wherein input/output by operation of an N-type transistor is positive, rising characteristic slope can be acquired and output range at a positive side becomes wide, thus increasing gain. |
