FERROELECTRIC MATERIAL ELEMENT AND MANUFACTURE THEREOF

摘要

PURPOSE: To provide a high-sensitivity and low-cost ferroelectric material element. CONSTITUTION: An MgO thin film 102, of which crystal is preferentially orientated and which consists of an NaCl crystal structure, is arranged on the surface of a stainless metal substrate 101, a lower electrode 103 consisting of a Pt thin film is arranged on the surface of the thin film 102, a specified part of the electrode 103 is covered with a ferroelectric material film 104 consisting of a Pb0.9 La0.1 Ti0.975 O3 film and an upper electrode 108 consisting of an Ni-Cr thin film is arranged on the surface of the film 104. Etching holes 105 are formed in such a way that they are penetrated the thin film 102, the electrode 103, the film 104 and the electrode 108 and reach the surface of the substrate 101 and air gap layers 110 formed by etching away parts of the substrate 101 through the holes 105 are provided in the upper layer part of the substrate 101.