摘要 |
<p>PURPOSE:To provide a semiconductor light emitting element capable of performing high-efficiency light emission within a region from red color to blue color by forming and producing a layer comprising a semiconductor of the same base on a substrate having high quality. CONSTITUTION:A compound semiconductor of chalcopyrite group containing at least one kind of Ag, Se, S as well as Ga, Al and In is used as a material for forming light-emitting portions 11 and 12 by using a high-quality InP substrate 100. In this semiconductor, its lattice constant coincides with the lattice constant of InP forming the substrate 100 within the range of composition ratio where light in the red to blue region is oscillated, so that semiconductor layers 11 and 12 lattice-matching to the substrate 100 can be obtained.</p> |