| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field emitting type electronic device by which generation of a leakage current can be reduced and a yield can be improved by forming a projecting part on a conductive base board, and forming an insulating layer and a metallic thin film for an electron extraction electrode on its projecting part peripheral surface. SOLUTION: After a first SiO2 layer 12a is formed on a board 11, a first photoresist pattern 13 to form a negative electrode is formed. A desired SiO2 pattern 12 is formed by etching by using this as a mask, and the photoresist pattern 13 is removed. The board 11 is worked in a shape being a basis of an electron emitting cold cathode chip. Next, a second SiO2 layer is formed by oxidizing a surface of the board 11 by acid, and a third SiO2 layer 15 is also formed as an inter-layer insulating layer, and an Al layer 16 as a gate electrode is formed. Next, a second photoresist pattern 18 is formed, and an unnecessary part of the Al layer 16 is removed by etching. The photoresist pattern 18 is removed, and the SiO layer is removed, and a field emitting type electron group having the Al layer 16 of the gate electrode and an electron emitting cold cathode 17 can be obtained.</p> |
