| 摘要 |
PROBLEM TO BE SOLVED: To improve the light-emitting efficiency of a semiconductor light- emitting element by successively laminating two or more semiconductor layers having one conductivity and another two or more semiconductor layers having the revers conductivity upon another on a semiconductor substrate and partially interposing an insulating film between conducting paths in the semiconductor layers. SOLUTION: Each semiconductor layer of an n-type GaAs layer 2, an n-type AlGaAs layer 3, a first p-type AlGaAs layer 4, a second p-type AlGaAs layer 5, and a p<+> -type GaAs laeyr 6 is constituted of a single-crystal thin firm connected to the lattice of a semiconductor substrate 1. The n-type GaAs layer 2 and AlGaAs layer 3 have the n-type conductivity, and the first and second p-type AlGaAs layers 4 and 5 have reverse conductivity. The substrata 1 is composed of a single-crystal semiconductor substrate of GaAs, Si, etc. An insulating film 10 composed of SiO2 , etc., is provided for expanding conducting paths in the semiconductor layers 2-6 and the width of the film 10 is adjusted to, for example, about 2-10μm. When the semiconductor layers are formed by forming such an insulating film 10, a cavity 10a is formed in the insulating film 10. |
