发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing semiconductor devices, which comprises the steps of forming a first conductive region of a first conductive material for effecting a growth of a conductive film thereon by a selective growth method. A second conductive region of a second conductive material for not effecting a growth of a conductive film is formed in the selective growth method. An insulating layer is covered with the first and second conductive regions. A through hole in the insulating layer for filling the hole with the conductive film is formed. The conductive film is grown within said through hole over the first conductive region, thereby filling the through hole with the conductive film. |
申请公布号 |
KR0169282(B1) |
申请公布日期 |
1999.02.01 |
申请号 |
KR19940016561 |
申请日期 |
1994.07.09 |
申请人 |
TOSHIBA KK |
发明人 |
OHSHIMA, YOICHI;AOCHI, HIDEAKI |
分类号 |
H01L21/285;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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