发明名称 CONTAMINATION CONTROLLING METHOD AND PLASMA PROCESSING CHAMBER
摘要 A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.
申请公布号 WO9950886(A1) 申请公布日期 1999.10.07
申请号 WO1999US06658 申请日期 1999.03.26
申请人 LAM RESEARCH CORPORATION 发明人 SCHOEPP, ALAN, M.;WICKER, THOMAS, E.;MARASCHIN, ROBERT, A.
分类号 H05H1/46;C23C16/44;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 主分类号 H05H1/46
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