发明名称 |
Method of forming polycrystalline semiconductor thin film |
摘要 |
Method of forming a uniform polycrystalline semiconductor thin film by laser annealing. The method is started with preparing a substrate having an insulating layer which has a relatively low thermal conductivity and a thickness of more than 20 nm. Then, an amorphous silicon thin film having a relatively high thermal conductivity is formed to a thickness of less than 35 nm on the insulating layer. Thereafter, the amorphous silicon thin film is irradiated with laser beam to impart thermal energy to the film. In this way, the amorphous film is converted into a polysilicon thin film. Since the thickness of the amorphous silicon film is less than 35 nm, polysilicons having uniform grain diameters can be grown.
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申请公布号 |
US6025217(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19950561246 |
申请日期 |
1995.11.21 |
申请人 |
SONY CORPORATION |
发明人 |
KANAYA, YASUHIRO;YAMAZAKI, MASARU;FUJINO, MASAHIRO;SUZUKI, NOBUAKI;KUKI, MIDORI |
分类号 |
H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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