METHOD FOR MANUFACTURING CELL PROJECTION MASK OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE: A method for manufacturing a cell projection mask of a semiconductor element is provided to correct an orthogonality by correcting an overlay of a DRAM. CONSTITUTION: A method for manufacturing a cell projection mask of a semiconductor element comprises the steps of: forming an oxide layer on a front face of a silicon substrate; forming insulated layer on an upper portion of the silicon substrate and forming an insulated layer pattern as a first mask process; and etching lower portion of the oxide layer and the upper portion of the silicon. The first mask process comprises the steps of: forming an overlay measurement mark(19) within the first mask; performing an insulated layer patterning; extracting a parameter for controlling orthogonality; correcting the orthogonality; and performing a wafer front face patterning as a second mask process.