LOW TEMPERATURE POLY-SILICON TFT AND FABRICATION METHOD THEREOF,申请号KR20000023111-传众专利搜索

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发明名称	LOW TEMPERATURE POLY-SILICON TFT AND FABRICATION METHOD THEREOF
摘要
申请公布号	KR20010098269(A)	申请公布日期	2001.11.08
申请号	KR20000023111	申请日期	2000.04.29
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, HYEON DAE;MIN, HUN GI;MUN, GUK CHEOL
分类号	H01L29/786;(IPC1-7):H01L29/786	主分类号	H01L29/786
代理机构		代理人
主权项
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