POSITIVE RESIST COMPOSITION

摘要

PURPOSE: Provided is a positive resist composition suitable for the case using an exposure light source of 160 nm or less, particularly a F2 excimer laser ray(157 nm), and satisfying the properties with respect to the coatability and the development defect. CONSTITUTION: The positive resist composition comprises (A) a fluorine group-containing resin having a structure wherein at least one of the main chain and the side chain of the polymer skeleton has at least one fluorine atom, and a group capable of decomposing under the action of an acid to increase the solubility in an alkali developer; (B) a compound capable of generating an acid upon irradiation with at least one of an actinic ray or radiation; and (C) a surfactant containing at least one of a silicon atom and fluorine atom.