MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, CIRCUIT BOARD, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving an etching rate in dry etching and improving the quality of the semiconductor device. SOLUTION: Before carrying out dry-etching to the rear face of a semiconductor substrate 10, a film 70 reduced in the area of an etching opening is formed on the rear face 10b of the semiconductor substrate 10. COPYRIGHT: (C)2005,JPO&NCIPI