| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and manufacturing method thereof in which the characteristics can be fully improved. SOLUTION: An MOSFET 30 comprises an SiC film 11. The SiC film 11 includes a facet forming layer 11a on its surface, a length P1 of one term of facet of the facet forming layer 11a is 100 nm or larger, and the facet-forming layer 11a is defined as a channel 16. Furthermore, the manufacturing method of the MOSFET 30 comprises a step of forming the SiC film 11, a thermal processing step of thermal processing of the SiC film 11 in a state of feeding Si onto the surface of the SiC film 11, and a step of defining, as the channel 16, the facet obtained from the thermal processing step on the surface of the SiC film 11. COPYRIGHT: (C)2007,JPO&INPIT
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