| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a one layer gate type nonvolatile memory element having a novel structure. SOLUTION: The semiconductor device including a nonvolatile memory element C100 comprises an isolation insulating layer 20 provided on a semiconductor layer 10 while including a first region 10A, a second region 10B adjacent to the first region 10A, and a third region 10C adjacent to the second region 10B and defining a region for forming the nonvolatile memory element C100, a first diffusion layer 12 formed in the first region 10A, an insulation layer 30 formed on a P type first source region and a first drain region 36 which are formed in the second region 10B, a P type second source region and a second drain region 38 which are formed in the third region 10C and on the semiconductor layer 10, and a conductive layer 32 formed on the insulation layer 30. COPYRIGHT: (C)2007,JPO&INPIT
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