| 摘要 |
PROBLEM TO BE SOLVED: To provide a small solid state imaging device in which sensitivity can be improved sharply. SOLUTION: The solid state imaging device comprises a semiconductor substrate 11 on which a plurality of photoelectric converting sections 17 are formed, a plurality of microlenses 123 provided above respective photoelectric converting sections 17, and a color filter layer 15 where filter films 21a, 21b and 21c of different transmission wavelength band located above respective photoelectric converting sections 17 are arranged two-dimensionally. The plurality of photoelectric converting sections 17 include first photoelectric converting sections, and second photoelectric converting sections located below a filter film passing the light of longer wavelength as compared with the filter film above the first photoelectric converting sections. A microlens 123 located above the second photoelectric converting section has a refractive index larger than that of a microlens 123 located above the first photoelectric converting section. COPYRIGHT: (C)2007,JPO&INPIT
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