METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

A method for forming an isolation layer in a semiconductor device is provided to prevent the area of an active region from being decreased by growing an epitaxial layer in a trench where an isolation layer is to be formed. From a semiconductor substrate(31) having an active region and an isolation region, the isolation region is etched to form a trench(T). A heat treatment is performed on the resultant structure to decrease etch damage generated in an etch process for forming the trench. The heat-treated oxide layer is removed. A silicon epitaxial layer is grown on the surface of the trench. A sidewall oxide layer(34) is formed on the surface of the trench having the silicon epitaxial layer. An insulation layer(36) is filled in the trench having the sidewall oxide layer.