发明名称 |
Methods of manufacturing semiconductor devices having single crystalline silicon layers |
摘要 |
Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed layer. The first non-single crystalline silicon layer is irradiated with a laser to transform the first non-single crystalline silicon layer into a first single crystalline silicon layer. Corresponding semiconductor devices are also disclosed.
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申请公布号 |
US7364955(B2) |
申请公布日期 |
2008.04.29 |
申请号 |
US20050121562 |
申请日期 |
2005.05.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON YONG-HOON;SHIN YU-GYUN |
分类号 |
H01L21/84;C30B1/00;C30B3/00;C30B5/00;C30B28/02;H01L21/00;H01L21/20;H01L21/30;H01L21/36;H01L21/46;H01L21/822;H01L27/06 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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