GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES

摘要

A LIGHT EMITTING DIODE (40) IS PROVIDED HAVING A GROUP III NITRIDE BASED SUPERLATTICE (16) AND A GROUP III NITRIDE BASED ACTIVE REGION (18) ON THE SUPERLATTICE (16). THE ACTIVE REGION (18) HAS AT LEAST ONE QUANTUM WELL STRUCTURE. THE QUANTUM WELL STRUCTURE INCLUDES A FIRST GROUP III NITRIDE BASED BARRIER LAYER (118), A GROUP III NITRIDE BASED QUANTUM WELL LAYER (120) ON THE FIRST BARRIER LAYER (118) AND A SECOND GROUP III NITRIDE BASED BARRIER LAYER (118). A GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE AND METHODS OF FABRICATING A GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE HAVING AN ACTIVE REGION (225) COMPRISING AT LEAST ONE QUANTUM WELL STRUCTURE (221) ARE PROVIDED. THE QUANTUM WELL STRUCTURE (221) INCLUDES A WELL SUPPORT LAYER (218A) COMPRISING A GROUP III NITRIDE, A QUANTUM WELL LAYER (220) COMPRISING A GROUP III NITRIDE ON THE WELL SUPPORT LAYER (218A) AND A CAP LAYER (218B) COMPRISING A GROUP III NITRIDE ON THE QUANTUM WELL LAYER (220). A GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE IS ALSO PROVIDED THAT INCLUDES A GALLIUM NITRIDE BASED SUPERLATTICE (16) HAVING AT LEAST TWO PERIODS OF ALTERNATING LAYERS OF INXGA1-XN AND INY GA1-YN, WHERE £X<1 AND 0£Y<1 AND X IS NOT EQUAL TO Y. THE SEMICONDUCTOR DEVICE MAY BE A LIGHT EMITTING DIODE WITH A GROUP III NITRIDE BASED ACTIVE REGION. THE ACTIVE REGION MAY BE A MULTIPLE QUANTUM WELL ACTIVE REGION.