SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A transistor excellent in electrical characteristics and a method for manufacturing the transistor are provided. The transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel formation region over an insulating surface; a gate insulating film over the oxide semiconductor layer; a gate electrode overlapping with the channel formation region, over the gate insulating film; a source electrode in contact with the source region; and a drain electrode in contact with the drain region. The source region and the drain region include a portion having higher oxygen concentration than the channel formation region.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide semiconductor layer over an insulating surface; forming a gate insulating film over the oxide semiconductor layer; forming a gate electrode over the gate insulating film so as to overlap with the oxide semiconductor layer; and adding oxygen to a region which is in the oxide semiconductor layer and does not overlap with the gate electrode.