| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR |
| 摘要 |
A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor. |
| 申请公布号 |
US2016163849(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201514707150 |
申请日期 |
2015.05.08 |
| 申请人 |
DUPUY PHILIPPE;GRANDRY HUBERT |
发明人 |
DUPUY PHILIPPE;GRANDRY HUBERT |
| 分类号 |
H01L29/78;H01L29/423;H01L21/8234;H01L29/66;H01L27/07 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor product, comprising:
a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor. |
| 地址 |
TOULOUSE FR |
