| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor layer having an upper surface and an end surface intersecting with the upper surface, an upper electrode (source electrode) formed on the upper surface and electrically connected to the semiconductor layer, and a protecting film extending from over at least a portion of the upper surface to over at least a portion of the end surface are provided. |
| 申请公布号 |
US2016163800(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201414903424 |
申请日期 |
2014.05.28 |
| 申请人 |
Sumitomo Electric Industries, Ltd. |
发明人 |
Sakai Mitsuhiko |
| 分类号 |
H01L29/16;H01L23/31;H01L23/29;H01L21/78;H01L29/872;H01L29/739;H01L21/04;H01L21/02;H01L29/06;H01L29/78 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor layer having an upper surface and an end surface intersecting with said upper surface; an upper electrode formed on said upper surface and electrically connected to said semiconductor layer; and a protecting film extending from over at least a portion of said upper surface to over at least a portion of said end surface. |
| 地址 |
Osaka-shi JP |
