FIN CUT ON SIT LEVEL

摘要

A method of forming semiconductor fins with variable pitches of arbitrary values in a sidewall image transfer (SIT) process is provided. After forming an array of first mandrel structures with a constant pitch and removing at least one first mandrel structure form the array, a set of second mandrel structures are formed overlapping the first mandrel structures. The combination of the first mandrel structures and the second mandrel structures defines pitches of sidewall spacer patterns to be subsequently formed.

主权项

1. A semiconductor structure comprising a plurality of semiconductor fins located on a substrate, wherein:
a first sub-set of the plurality of semiconductor fins have a first pitch equal to a sum of a width of each of the plurality of semiconductor fins and a spacing between two closest adjacent semiconductor fins in the plurality of semiconductor fins, a second sub-set of the plurality of semiconductor fins have a second pitch equal to n times the first pitch, wherein n is an integer greater than one, and a third sub-set of the plurality of semiconductor fins have a third pitch greater than a first pitch, wherein the third pitch does not equal to an integer multiplication of the first pitch.