发明名称 INTERPOSER SUBSTRATE AND METHOD OF FABRICATING THE SAME
摘要 The invention provides an interposer substrate and a method of fabricating the same. The method includes: etching a carrier to form a recessed groove thereon; filling a dielectric material in the recessed groove to form a first dielectric material layer, or forming a patterned first dielectric material layer on the carrier; forming a first wiring layer, a first conductive block and a second dielectric material layer on the carrier and the first dielectric material layer sequentially, with the first wiring layer and the first conductive block embedded in the second dielectric material layer; and forming a second wiring layer and a second conductive block on the second dielectric material layer. A coreless interposer substrate having fine pitches is thus fabricated.
申请公布号 US2016163626(A1) 申请公布日期 2016.06.09
申请号 US201514706101 申请日期 2015.05.07
申请人 PHOENIX PIONEER TECHNOLOGY CO., LTD. 发明人 Chou Pao-Hung;Hsu Shih-Ping
分类号 H01L23/498;H05K3/46;H01L21/683;H05K1/11;H01L21/48;H05K3/06;H05K3/40 主分类号 H01L23/498
代理机构 代理人
主权项 1. A method of fabricating an interposer substrate, comprising: forming a plurality of recessed grooves on a carrier, and forming a first dielectric material layer in the recessed grooves; forming a first wiring layer on the carrier and the first dielectric material layer; forming a plurality of first conductive blocks on the first wiring layer; covering the first wiring layer and the first conductive blocks with a second dielectric material layer, with terminal portions of the first conductive blocks exposed from the second dielectric material layer; forming on the second dielectric material layer a second wiring layer that is electrically connected with the first conductive blocks; forming a plurality of second conductive blocks on the second wiring layer; and removing the carrier.
地址 Hsinchu County TW