发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM AND METHOD OF TESTING SEMICONDUCTOR DEVICE
摘要 A semiconductor device may include a semiconductor substrate doped with a first type impurity; a through electrode inserted in the semiconductor substrate; an active area formed in the semiconductor substrate to surround an upper portion of sidewalls of the through electrode, and doped with a second type impurity; an insulating layer formed between the semiconductor substrate and the through electrode, and between the active area and the through electrode; a drive circuit suitable for applying a first voltage to the through electrode in a test operation; and a test pad connected to the active area electrically in the test operation, to which a voltage is applied from outside.
申请公布号 US2016163607(A1) 申请公布日期 2016.06.09
申请号 US201514715273 申请日期 2015.05.18
申请人 SK hynix Inc. 发明人 OH Sang-Mook;CHO Jin-Hee
分类号 H01L21/66;G01R31/12;G01R31/26 主分类号 H01L21/66
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate doped with a first type impurity; a through electrode inserted in the semiconductor substrate; an active area formed in the semiconductor substrate to surround an upper portion of sidewalls of the through electrode, and doped with a second type impurity; an insulating layer formed between the semiconductor substrate and the through electrode, and between the active area and the through electrode; a drive circuit suitable for applying a first voltage to the through electrode in a test operation; and a test pad connected to the active area, to which a voltage is applied during the test operation.
地址 Gyeonggi-do KR