发明名称 |
SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM AND METHOD OF TESTING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device may include a semiconductor substrate doped with a first type impurity; a through electrode inserted in the semiconductor substrate; an active area formed in the semiconductor substrate to surround an upper portion of sidewalls of the through electrode, and doped with a second type impurity; an insulating layer formed between the semiconductor substrate and the through electrode, and between the active area and the through electrode; a drive circuit suitable for applying a first voltage to the through electrode in a test operation; and a test pad connected to the active area electrically in the test operation, to which a voltage is applied from outside. |
申请公布号 |
US2016163607(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201514715273 |
申请日期 |
2015.05.18 |
申请人 |
SK hynix Inc. |
发明人 |
OH Sang-Mook;CHO Jin-Hee |
分类号 |
H01L21/66;G01R31/12;G01R31/26 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
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主权项 |
1. A semiconductor device comprising:
a semiconductor substrate doped with a first type impurity; a through electrode inserted in the semiconductor substrate; an active area formed in the semiconductor substrate to surround an upper portion of sidewalls of the through electrode, and doped with a second type impurity; an insulating layer formed between the semiconductor substrate and the through electrode, and between the active area and the through electrode; a drive circuit suitable for applying a first voltage to the through electrode in a test operation; and a test pad connected to the active area, to which a voltage is applied during the test operation. |
地址 |
Gyeonggi-do KR |