发明名称 |
SELF-ALIGNED QUADRUPLE PATTERNING PROCESS |
摘要 |
Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks. |
申请公布号 |
US2016163600(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201615046055 |
申请日期 |
2016.02.17 |
申请人 |
International Business Machines Corporation |
发明人 |
COLBURN Matthew E.;KANAKASABAPATHY Sivananda K.;LIE Fee Li;SIEG Stuart A. |
分类号 |
H01L21/8234;H01L29/66;H01L21/3105;H01L21/311;H01L21/306;H01L21/308 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a mandrel structure comprising:
providing a first set of second mandrel structures having a first width on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width that is less than said first width on non-facing sidewall surfaces of said neighboring pair of first mandrel structures; removing each first mandrel structure; forming a spacer on a sidewall surface of said first and second sets of second mandrel structures, wherein in a region between said neighboring pair of first mandrel structures a merged spacer is formed; removing said first and second sets of second mandrel structures; and patterning a portion of an underlying substrate utilizing said second spacer and said merged spacer as etch masks. |
地址 |
Armonk NY US |