| 发明名称 |
METHODS OF FORMING FEATURES HAVING DIFFERING PITCH SPACING AND CRITICAL DIMENSIONS |
| 摘要 |
Methods of forming features having differing pitch spacing and critical dimensions are disclosed herein. One method includes forming an underlying layer of material above a semiconductor substrate. The method further includes forming a masking layer above the underlying layer of material. The masking layer includes features positioned above a first region of the substrate and features positioned above a second region of the substrate. The features have different pitch spacing and critical dimensions. The method further includes performing at least one etching process on the underlying layer of material through the masking layer. |
| 申请公布号 |
US2016163555(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201514676097 |
申请日期 |
2015.04.01 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Jang Linus;Kim Ryan Ryoung-Han |
| 分类号 |
H01L21/308;H01L21/311;H01L21/8234 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a layer of material above a semiconductor substrate; forming a masking layer above said layer of material, said masking layer comprising a first plurality of features positioned above a first region of said semiconductor substrate and a second plurality of features positioned above a second region of said semiconductor substrate, said first plurality of features comprising a different pitch spacing and a different critical dimension than said second plurality of features; and performing at least one etching process on said layer of material through said masking layer. |
| 地址 |
Grand Cayman KY |
