SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; an epitaxial layer formed on the main surface; and a deformation suppression layer formed on a backside surface of the base substrate opposite to the main surface. In this way, the deformation suppression layer suppresses the substrate from being deformed (for example, warped during high-temperature treatment). This can reduce a risk of causing defects such as crack in the silicon carbide semiconductor substrate during the manufacturing process in performing a method for manufacturing a silicon carbide semiconductor device using the silicon carbide semiconductor substrate.

主权项

1. A silicon carbide semiconductor substrate comprising:
a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; an epitaxial layer formed on said main surface; and a deformation suppression layer formed on a backside surface of said base substrate opposite to said main surface.