| 摘要 |
Disclosed is a semiconductor light emitting device, comprising: a plurality of semiconductor layers; a reflection layer disposed on one side of the semiconductor layers, and reflecting light generated in an active layer; a first electrode and a second electrode for supplying an electron and a hole, wherein at least one of the first electrode and the second electrode is electrically insulated from the semiconductor layers, and electrically communicates with the semiconductor layers by an electrical connection; and a growth substrate having the length of more than or equal to 75um and equal to or less than 200um such that increase of light extraction efficiency compensates for decrease of inner quantum efficiency, compared to external quantum efficiency when an upper surface thereof has the length of 200um. According to the semiconductor light emitting device of the present invention, absorption of light in the semiconductor light emitting device is reduced, thereby improving the light extraction efficiency. |
