NITRIDE-BASED TRANSISTOR HAVING DISLOCATION PREVENTING PATTERN LAYER

摘要

A nitride-based transistor according to one embodiment comprises: a first nitride-based semiconductor pattern layer doped as a first type; a second nitride-based semiconductor pattern layer doped as a second type which surrounds the first semiconductor pattern layer; an inhibiting insulating dislocation pattern layer located on a lower surface of the second semiconductor pattern layer; a third nitride-based semiconductor pattern layer doped as the first type which surrounds the second semiconductor layer and the inhibiting insulating dislocation pattern layer; and a gate dielectric layer located on at least the surface of the second semiconductor pattern layer and a gate electrode layer. The surface of the first pattern layer or third pattern layer is located on the same plane. When the transistor turns on, a conductive carrier is conducted from the first semiconductor pattern layer to the third semiconductor pattern layer through a conductive channel layer formed within the second semiconductor pattern layer in a lower part of the gate dielectric layer.