| 发明名称 |
SOLUTIONS AND PROCESSES FOR REMOVING SUBSTANCES FROM SUBSTRATES |
| 摘要 |
The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise. |
| 申请公布号 |
US2016215240(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514602414 |
申请日期 |
2015.01.22 |
| 申请人 |
Dynaloy, LLC |
发明人 |
Acra Travis;Peters Richard Dalton;Pollard Kimberly Dona;Pfettscher Donald James |
| 分类号 |
C11D7/32;H01L21/02;H01L23/00;C11D7/26;H01L21/027 |
主分类号 |
C11D7/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solution comprising:
a first amine; a second amine; a third amine; and a quaternary ammonium hydroxide; wherein the first amine, the second amine, and the third amine are each different compounds. |
| 地址 |
Kingsport TN US |
