发明名称 |
SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can keep a voltage on a transistor at a level equal to or lower than a predetermined value and can retain multilevel data.SOLUTION: In a configuration where electrical continuity between a source line SL precharged to potential VDM and a bit line BL is established through a transistor 11 to make the bit line discharge, at a data reading operation from a memory cell MC, for reading a potential retained at a gate of the transistor 11, the potential of the bit line BL is switched from VBL to GND in accordance with a drop in potential of the source line SL. The voltage between the source and drain of the transistor 11 can be kept at a level equal to or lower than a breakdown voltage by discharge.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016146227(A) |
申请公布日期 |
2016.08.12 |
申请号 |
JP20150087715 |
申请日期 |
2015.04.22 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MATSUZAKI TAKANORI;INOUE HIROKI |
分类号 |
G11C11/405;G11C11/56;H01L21/336;H01L21/8242;H01L21/8247;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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