ION CONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To obtain an ion conductor device of a thin film having superior bonding characteristics of electrodes and its manufacture. CONSTITUTION:A ZrO2-Y2O3 film 13 is formed as an ion conductor film on a silicon substrate 11 via a silicon oxide film 12. A Pt cathode electrode 16 and an anode electrode 17 are selectively formed on the film 13 via buffer layers 14, 15. The buffer layers 14, 15 are oxide films of the same series as the ZrO2-Y2O3 film 13, which are formed by reactive sputtering using oxygen gas as a carrier gas and controlling the supplying amount of oxygen gas variably. The content of oxygen is arranged in the inclined distribution so as to be zero where the buffer layers 14, 15 are in touch with the Pt electrodes 16, 17.