| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for liquid immersion exposure for improving deterioration of pattern fall due to post exposure time delay between exposure-PEB, having superior following of liquid immersion liquid, in the liquid immersion exposure being suitably used in an ultra microlithography process of manufacture or the like of an ultra LSI and high-capacity microchips and the other photofabrication processes, and to provide a pattern forming method that uses the composition. <P>SOLUTION: The positive resist composition contains a resin for increasing the dissolution rate for alkalic development liquid due to the action of acid having specific repeating unit, (B) a compound generating acid by the irradiation of active beam or radiation, (C) a solvent, and (D) a surfactant. The pattern forming method using it is provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
