| 摘要 |
<p>PURPOSE:To isolate elements of arbitrary dimensions, by forming a whole surface electrode on a III-V compound semiconductor in which a P-N junction is formed, and performing sputter etching with a convergent ion beam. CONSTITUTION:An N-type AlGaAs layer 2, a P-type AlGaAs layer 3, and a P-type GaAs layer 4 are formed on an N-type GaAs substrate 1 by liquid epitaxial growth. Au-Ge-Ni as the common electrode 5 of the substrate 1, and Au-Zn as the surface electrode 6 are evaporated on the whole surface, thereby obtaining an LED substrate. Unit elements 30 of an LED are isolated by etching wherein chlorine gas is applied to assist gas and a convergent ion beam is used.</p> |
