| 摘要 |
A system for arbitrary adjustment of device characteristics to produce parameter matched arrays or to do custom design utilizes computer control. The computer is linked with electron beam scanned testing to derive individual device characteristic information such as breakdown voltage, leakage, and switching time. From such derived information the computer generates a signal back to the electron beam, increasing its current intensity to heat the device and thereby change the device's characteristic properties. If bulk breakdown voltage is too low, for example, increased current intensity shifts the material toward n-type if done at about 500 DEG C. in an N<+>p diode, this would increase bulk breakdown voltage. When it reaches the predetermined (computed) level, the beam cuts off.
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