发明名称 |
Source-earth connection formation for MESFET chips - uses substrate with contacts each projecting beyond corresponding chip to provide contact edge |
摘要 |
<p>The connections for several MOSFET chips (11) are formed simultaneously by using a common substrate (1) divided into parallel sections (12,13) in which the individual chips (11) are placed. Each section (12,13) has a surface contact (4) for the chip (11) which projects (4) for the chip (11) which projects beyond the edge of the latter at one side, to provide a contact edge which the contact edge projects. Pref. the surface of the substrate (1) with the applied chip contacts (4,5,6) is coated with a protective lacquer.</p> |
申请公布号 |
DE3043903(A1) |
申请公布日期 |
1982.07.01 |
申请号 |
DE19803043903 |
申请日期 |
1980.11.21 |
申请人 |
SIEMENS AG |
发明人 |
KNIEKAMP,HERMANN,DIPL.-PHYS.;RISTOW,DIETRICH,DIPL.-PHYS.DR. |
分类号 |
H01L29/80;H01L21/338;H01L21/78;H01L23/12;H01L23/31;H01L23/482;H01L23/66;H01L29/812;(IPC1-7):01L21/60;01L21/78;01L21/88;01L29/78 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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