| 摘要 |
PURPOSE:To enable a construction like the quantum well construction by growing crystal to form a plain surface filling grooves by LPE(liquid phase epitaxy) method and by growing the remaining layers including an active layer using a method such as MBE(molecular beam epitaxial growth) which is excellent in the control of film thickness. CONSTITUTION:On an N-GAAsd substrate 1 which has a stripe-like groove 9, an N-AlxGa1-xAs clad layer 2 is grown and formed by LPE method. In this case, the thickness of the layer 2 except on the goove 9 is approx. 0.2mum and the surface of the layer 2 is plain even above the groove 9. Then, using this as a substrate, an N-AlxGa1-xAs clad layer 2 of approx. 0.1mum thick which is also a buffer layer, an N-AlyGa1-yAs active layer 3 of approx. 0.1mum thick, a P-Alz Ga1-z As clad layer 4 of approx. 1.2mum thick and, at last, an N-GaAs ohmic layer 5 of 0.5mum thick are sequentially grown and laminated by MBE method. Next, a P-channel 6 by selective diffusion of Zn is formed and electrodes 7, 8 are attached.
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