| 摘要 |
PURPOSE:To obtain the current ratio of excellent accuracy for the titled semiconductor integrated circuit by a method wherein the number of through holes located between the transistor, whereon the current of n-times of the reference current, is increased by n-times, and the voltage drop due to the resistance of the through holes is made even, thereby enabling to make VBE equal. CONSTITUTION:The emitter 3 of the first transistor 1, whereon the reference current runs, is connected to a resistor 5 using a single-layer wire through a two-layer wiring and a through hole 13 and by providing a through hole 12. Then, the transistor whereon an emitter current of n-times runs is divided into the second transistor 2' whereon an emitter current of n/2 and the third transistor 2''. Emitters 4 and 4' are connected to a through hole 14 through a two-layer wiring, and they are connected to a resistor 6 using a single-layer wiring.
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