| 摘要 |
PURPOSE:To improve the withstand voltage between each end part as well as to improve the yield of production of the titled device without increasing the distance between each base metal film by a method wherein a groove is formed on the semiconductor surface located between the opposing end parts of each base metal film, and a dielectric film is buried. CONSTITUTION:Base metals 2a and 2b are selectively formed on a semiconductor substrate 1 leaving the prescribed interval and in an opposingly positioned manner. A groove 5 is formed on the surface of the semiconductor substrate 1 positioned between the opposing end parts of the base metal films 2a and 2b by performing an etching. When the part between the base metal films 2a and 2b is buried and a dielectric film 3 extending on the base metal film 2b is formed, the groove 5 is buried with the dielectric film 3 simultaneously.
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