| 摘要 |
PURPOSE:To obtain an insulated and isolated substrate having no warpage by forming the recesses with the predetermined depth and imensions of aperture to the predetermined areas of semiconductor substrate, converting the surface of ion implanted layer to the insulated film layer after implanting impurity ion in the predetermined depth from the surface, and grinding the growth layer until the insulated film layer appears after allowing the semiconductor layer to grow on the entire surface. CONSTITUTION:A plurality of recesses 21 with the predetermined depth and dimensions of aperture are formed by the etching to the surface of an Si substrate 11 and the oxygen O2 ion 6 in high concentration is implanted in the entire part including such recesses in order to form the ion implanted layer having the predetermined depth. Only the surface of implanted layer is changed to the perfect SiO2 film 31 by the heat processing, the ion implanted layer is isolated and the Si layer 41 is caused to grow on the entire part by the epitaxial growth method. Thereafter, the layer 41 is ground or polished from the surface until the film 31 appears and thereby the substrate having desired islands can be obtained As described above, the substrate insulated and isolated by dielectric material can be obtained.
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