| 摘要 |
PURPOSE:To remove the adverse effect of inhomogeneous impurity located around a substrate by removing the inhomogeneous layer around a single crystal ingot. CONSTITUTION:A larger P type Si ingot 1 than a definite dimension is picked up, an inhomogeneous layer 8 of impurity such as O2 or C around the ingot is polished and removed, a required diameter ingot 1' is made and sliced into a P type Si substrate 2. When an N<+> layer 3 is buried, an N layer 6 is epitaxially formed and an element region is formed, an impurity unhomogeneous layer 8 has already been removed and similarly in both a peripheral portion 310 and a central portion 410, a minute defect 4 getters impurity introduced during manufacture whereby a semiconductor device of excellent characteristics and yield in all of the surface of the substrate can be obtained.
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