| 摘要 |
PURPOSE:To drive an optical switch with application of a small voltage and simplify its structure by forming light guides which cross each other slantingly on a compound semiconductor substrate and applying an electric field to a comb- shaped electrode provided on the intersection part in the thickness direction of the light guides, and thus performing optical switching. CONSTITUTION:An epitaxial film 6 is formed on the substrate 6, two crossing light guide patterns are drawn on the epitaxial film 6 with photoresist, and then ridge type waveguides 7 and 8 are formed by ion milling. Then, the comb-shaped electrode 9 is formed at the intersection of the two waveguides by an Al vapor deposition and a lift-off method, and a voltage is applied from a reverse surface electrode 10 formed by vapor-depositing Al on the reverse surface of the substrate 5 to the comb-shaped electrode 9. Almost all of the applied electric field is converged on a waveguide layer near the surface to realize switching characteristics, e.g. a -20dB extinction ratio with a 10V applied voltage.
|
