| 摘要 |
PURPOSE:To prevent the generation of a defective resist pattern caused by a UV optical reflection and a faulty wiring by a method wherein a resist pattern is formed on the polyimide resin film provided on an Al film. CONSTITUTION:The first insulating film 11 of polyimide resin and the like having the reflectivity lower than that of al is formed on an Al film 3, and a resist 4 is coated on the first insulating film 11 as an etching mask. A patterning is performed on the resist 4, the first insulating film 11 is etched using the resist 4 as an etching mask, and the first insulating mask having the same pattern as the resist is formed. Then, an etching is performed on the Al film using said first insulating film as a mask, and at the same time, the insulating film is left on the surface of the Al wiring. As the reflectivity for ultraviolet rays of the polyimide resin is lower than that of the aluminum which will be turned to a wiring, the generation of defective pattern caused by the reflection of ultraviolet rays can be prevented on the resist 4 located on the polyimide resin, and the reliability of the title semiconductor device can be improved.
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