发明名称 |
FABRICATION OF GROOVED SEMICONDUCTOR DEVICES |
摘要 |
<p>THE FABRICATION OF GROOVED SEMICONDUCTOR DEVICES V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to etching V-grooves in InP for the fabrication of CSBH InP/InGaAsP lasers.</p> |
申请公布号 |
CA1225465(A) |
申请公布日期 |
1987.08.11 |
申请号 |
CA19850484082 |
申请日期 |
1985.06.14 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
DAUTREMONT-SMITH, WILLIAM C.;WILT, DANIEL P. |
分类号 |
H01L21/306;H01L21/308;H01L21/316;H01S5/00;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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