Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded

摘要

An improved semiconductor device such as an improved graded band gap transistor and an improved graded band gap diode, characterized by comprising a non-single-crystal material containing silicon atom, a band gap adjusting atom and a localized level reducing atom and having a region in which a band gap continuously graded at least one position other than junction position and only one of a conduction band and a valence band being continuously graded. It gives a significant improvement in both the frequency characteristic and the photoresponse.