| 摘要 |
PURPOSE:To obtain a semiconductor light emitting diode adapted for a highly dense array by a method wherein a first and a second semiconductor layer hetero-junctioned with each other is provided onto a semiconductor current blocking layer, a light emitting section is formed in the above interface, and an optical output is taken out from an opening provided to these layers. CONSTITUTION:An p-type GaAs semiconductor current blocking layer 102, an n-type AlGaAS layer 103, and a p-type AlGaAs layer 104 are successively laminated on an n-type GaAs substrate 101. The layers 103 and 104 constitute a hetero-junction and a light emitting section is provided near the interface. A p-type GaAs semiconductor conductive layer 105 and a p-type electrode metal layer 106 are laminated thereon. A window 108 is provided to the layers 105 and 106 and its base is made to reach to the layer 104. When a current is made to flow between the layer 106 and the n-type electrode metal layer 107, the optical output can be taken out from the window 108 in a direction perpendicu lar to the substrate 101. By this setup, as a light emitting efficiency is improved, a semiconductor light emitting device of this design is adapted to a one dimen sional or a two dimensional highly dense array. |
