发明名称 RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To increase sensitivity by coating a substrate with a chemically sensitizable resist made of a mixture of a polymer with a photo acid generating agent, prebaking the resist and exposing the substrate to steam or vapor of alcohol. CONSTITUTION:A photo acid generating agent, e.g., triphenylsulfonium hexafluorophosphate reacts with a hydrogen donor, e.g., water contained in a resist under irradiation with light and generates proton acid by the catalytic action. In order to positively utilize the reaction with water, a resist film freed of the solvent by prebaking is moistened by keeping in steam for a while. A certain generating agent is liable to generate H<+> in the presence of alcohol and alpha-tosyloxy ethyl phenyl ketone easily generates sulfonic acid in an atmosphere of alcohol and can enhance sensitizing effect.
申请公布号 JPH0460551(A) 申请公布日期 1992.02.26
申请号 JP19900172007 申请日期 1990.06.29
申请人 FUJITSU LTD 发明人 NAKAMURA HIROKO
分类号 G03F7/38;G03F7/029;G03F7/039;H01L21/027 主分类号 G03F7/38
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