发明名称 PRODUCTION OF OXIDE SUPERCONDUCTOR THIN FILM
摘要 PURPOSE:To obtain an excellent thin film exhibiting superconductivity without using a post-treatment such as oxygen annealing after the film-forming by bringing a substrate into contact with an oxygen ion conductor and forming a film e.g. by sputtering while generating oxygen. CONSTITUTION:An oxygen ion conductor 3 (e.g. stabilized zirconia) is made to contact a substrate 2 and electrical current is passed through the conductor with e.g. electrodes 4, 5. An oxide superconductor thin film is formed on the substrate 2 under generation of oxygen without passing through a gaseous phase. The film-forming is carried out by CVD process, sputtering process, vacuum evaporation process, ion cluster beam process, molecular beam epitaxy process or laser ablation process.
申请公布号 JPH04219301(A) 申请公布日期 1992.08.10
申请号 JP19900196868 申请日期 1990.07.25
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OTANI HISASHI
分类号 C01B13/14;C01G1/00;C04B41/81;C23C14/08;C23C14/28;C23C16/40;C23C16/44;C30B29/22;H01B12/06;H01B13/00;H01L39/24 主分类号 C01B13/14
代理机构 代理人
主权项
地址